PCP1103-TD-H ON Semiconductor, PCP1103-TD-H Datasheet - Page 2

• Manufacturer Part Number: PCP1103-TD-H
• Description: Transistors Bipolar - BJT BIP PNP 1.5A 30V
• Manufacturer: ON Semiconductor

Specifications of PCP1103-TD-H

• Rohs: yes

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7007A-004
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0.4
0.5
0
0
Bot t om View
1
0.75
1.5
Top View
--0.1
4.5
1.6
3.0
Parameter
Collector-to-Emitter Voltage, V CE -- V
2
--0.2
--0.3
3
--0.4
I C -- V CE
--0.5
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
--0.6
I CBO
I EBO
h FE
f T
Cob
V BE (sat)
V (BR)CBO
V (BR)EBO
t on
t stg
t f
V CE (sat)
V (BR)CEO
1.5
Symbol
--0.7
0.4
--0.8 --0.9 --1.0
I B =0mA
V CB = -30V, I E =0A
V EB = -4V, I C =0A
V CE = -2V, I C = -100mA
V CE = -10V, I C = -300mA
V CB = -10V, f=1MHz
I C = -0.75A, I B = -15mA
I C = -0.75A, I B = -15mA
I C = -10μA, I E =0A
I C = -1mA, R BE =∞
I E = -10μA, I C =0A
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
IT14106
PCP1103
Conditions
Switching Time Test Circuit
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
PW=50μs
D.C.
0
INPUT
V CE = --2V
≤
1%
50Ω
--0.2
I C =--20I B1 =20I B2 =--0.75A
Base-to-Emitter Voltage, V BE -- V
--0.4
I B1
I B2
min
R B
I C -- V BE
200
-30
-30
-5
--0.6
Ratings
820μF
typ
+
-0.85
-250
V CC = --12V
450
115
35
30
9
--0.8
R L
max
-375
-0.1
-0.1
-1.2
560
OUTPUT
--1.0
No. A1346-2/4
IT14107
MHz
Unit
mV
μA
μA
pF
ns
ns
ns
V
V
V
V
--1.2