BTA312X-600E/DGQ NXP Semiconductors, BTA312X-600E/DGQ Datasheet - Page 5

• Manufacturer Part Number: BTA312X-600E/DGQ
• Description: Triacs
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600E/DGQ

• Rohs: yes

NXP Semiconductors
6. Isolation characteristics
Table 6.
7. Characteristics
Table 7.
BTA312X-600E
Product data sheet
Symbol
Fig. 6.
Symbol
Symbol
R
V
C
Static characteristics
I
GT
isol(RMS)
th(j-a)
isol
Z
(K/W)
th(j-h)
10
10
10
10
10
-1
-2
-3
1
-5
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Transient thermal impedance from junction to heatsink as a function of pulse duration
Isolation characteristics
Characteristics
Parameter
Parameter
Parameter
thermal resistance
from junction to
ambient
RMS isolation voltage
isolation capacitance
gate trigger current
10
-4
10
Conditions
Conditions
Conditions
All information provided in this document is subject to legal disclaimers.
in free air
sinusoidal waveform; clean and dust
free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
heatsink ; f = 1 MHz; T
V
T
-3
from all terminals to external heatsink;
from main terminal 2 to external
h
j
D
= 25 °C;
= 25 °C
= 12 V; I
Fig. 7
T
5 October 2012
= 0.1 A; T2+ G+;
10
-2
h
= 25 °C
(1)
(2)
(3)
(4)
10
-1
Min
Min
Min
-
-
-
-
1
BTA312X-600E
P
Typ
Typ
Typ
55
-
10
-
t
p
t
© NXP B.V. 2012. All rights reserved
p
3Q Hi-Com Triac
(s)
003aab672
Max
Max
Max
-
2500
-
10
t
10
Unit
Unit
Unit
K/W
V
pF
mA
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