NCV8871LVBGEVB ON Semiconductor, NCV8871LVBGEVB Datasheet - Page 2
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NCV8871LVBGEVB
Manufacturer Part Number
NCV8871LVBGEVB
Description
Power Management IC Development Tools NCV8871 EVAL BOARD
Manufacturer
ON Semiconductor
Datasheet
1.NCV8871LVBGEVB.pdf
(12 pages)
Specifications of NCV8871LVBGEVB
Rohs
yes
SYNC
PACKAGE PIN DESCRIPTIONS
EN/
Pin No.
1
2
3
4
5
6
7
8
R
C
EN/SYNC
C
C
EN/SYNC
Symbol
GDRV
VDRV
ISNS
GND
VFB
VIN
Pin
VC
VC
1
7
Enable and synchronization input. The falling edge synchronizes the internal oscillator. The part is disabled
into sleep mode when this pin is brought low for longer than the enable time−out period.
Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense
resistor to ground to sense the switching current for regulation and current limiting.
Ground reference.
Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from
GDRV to the gate to tailor EMC performance.
Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VIN. Bypass
with a 1.0 mF ceramic capacitor to ground.
Input voltage. If bootstrapping operation is desired, connect a diode from the input supply to VIN, in addi-
tion to a diode from the output voltage to VDRV and/or VIN.
Output of the voltage error amplifier. An external compensator network from VC to GND is used to stabilize
the converter.
Output voltage feedback. A resistor from the output voltage to VFB with another resistor from VFB to GND
creates a voltage divider for regulation and programming of the output voltage.
Figure 1. Simplified Block Diagram and Application Schematic
OSC
SC
TEMP
FAULT
LOGIC
+
http://onsemi.com
CLK
SCP
SS
CL
2
LOGIC
DRIVE
CSA
Gm
Function
V
VDRV
ref
6
5
4
2
3
8
VIN
VDRV
GDRV
ISNS
GND
VFB
C
DRV
R
SNS
L
Q
R
R
D
F1
F2
C
C
o
g
V
V
g
o