SBC807-25LT1G ON Semiconductor, SBC807-25LT1G Datasheet - Page 5

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SBC807-25LT1G

Manufacturer Part Number
SBC807-25LT1G
Description
Transistors Bipolar - BJT SS GP XSTR SPCL TR
Manufacturer
ON Semiconductor
Datasheet

Specifications of SBC807-25LT1G

Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V, 40 at 500 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Dc Current Gain Hfe Max
160 at 100 mA at 1 V
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SBC807-25LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 400
500
400
300
200
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.001
0.0001
Figure 10. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 8. DC Current Gain vs. Collector
I
C
/I
B
= 10
I
I
0.001
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
Collector Current
Current
1000
100
0.01
10
TYPICAL CHARACTERISTICS − BC807−25LT1
0.1
Figure 12. Current Gain Bandwidth Product
V
T
0.1
A
CE
= 25°C
= 1 V
V
−55°C
0.1
I
25°C
150°C
CE
C
, COLLECTOR CURRENT (mA)
1
= 1 V
vs. Collector Current
http://onsemi.com
1
1
10
5
0.01
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
0.001
0.0001
Figure 9. Collector Emitter Saturation Voltage
Figure 11. Base Emitter Voltage vs. Collector
100
V
I
C
CE
/I
B
= 5 V
= 10
0.001
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
vs. Collector Current
1000
0.01
Current
0.01
−55°C
150°C
25°C
25°C
0.1
150°C
0.1
−55°C
1
1

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