TIP32B-S Bourns, TIP32B-S Datasheet

no-image

TIP32B-S

Manufacturer Part Number
TIP32B-S
Description
Transistors Bipolar - BJT 80V 3A PNP
Manufacturer
Bourns
Datasheet

Specifications of TIP32B-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
1000
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
P
Continuous base current
Continuous device dissipation at (or below) 25°C
C
U
O
Storage temperature range
L
e
e
o
n
p
a
a
t n
c
r e
d
k
a l
n i
t a
e t
o c
m
This series is currently available, but
u
n i
Designed for Complementary Use with the
TIP31 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
m
p
o
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
e l l
not recommended for new designs.
g
e
u
p
d
t c
s
u j
e
V
d
a r
r o
n i
n
BE(off)
e
t c
d
u t
i v
c
u
o i
e r
r u
e c
i t c
n
e r
3
e v
e t
= 0, R
i d
2 .
t n
s s
m
o l
m
s (
p
p i
a
e
m
e
E
d
t a
a r
S
e
= 0)
B
e
f
o i
= 0.1 Ω, V
u t
o r
N
n
= 0)
n
o
r e
e r
m
e t
a
y g
a r
( t
c
) 1
a
n
p
r o
s (
s
g
≤ 0.3 ms, duty cycle ≤ 10%.
e
e
e
b
CC
e
f
e
r o
o l
N
= -20 V.
w
o
1
e t
0
)
2
s
R
) 4
° 5
e
A
c
C
T
o
N I
n
c
f
e r
s d
a
G
s
e
e
a
e t
r i
m
e t
p
m
e
p
a r
e
a r
u t
e r
u t
e r
s (
s (
e
e
e
N
e
o
N
e t
o
e t
C
E
B
) 2
) 3
Pin 2 is in electrical contact with the mounting base.
PNP SILICON POWER TRANSISTORS
TIP32
TIP32A
TIP32B
TIP32C
TIP32
TIP32A
TIP32B
TIP32C
TO-220 PACKAGE
(TOP VIEW)
S
Y
½
V
V
V
M
T
I
P
P
CBO
CEO
EBO
T
CM
I L
I
I
T
stg
C
B
tot
tot
B
L
j
C
O
B(on)
2
1
2
3
L
= -0.4 A, R
-65 to +150
-65 to +150
V
A
-100
-120
-140
-100
250
-80
-40
-60
-80
40
32
L
-5
-3
-5
-1
2
U
BE
E
= 100 Ω,
MDTRACA
U
mJ
°C
°C
°C
N
W
W
V
V
V
A
A
A
T I
1

Related parts for TIP32B-S

TIP32B-S Summary of contents

Page 1

... TO-220 PACKAGE (TOP VIEW Pin electrical contact with the mounting base TIP32 TIP32A V CBO TIP32B TIP32C TIP32 TIP32A V CEO TIP32B TIP32C V EBO tot tot ½ stg ...

Page 2

... TIP32, TIP32A,TIP32B, TIP32C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter -30 mA (BR)CEO C breakdown voltage (see Note - Collector-emitter V = -100 CES cut-off current V = -120 -140 V CE Collector cut-off CEO current V = -60 V ...

Page 3

... -0·01 -1·0 -10 -0·1 BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT - 25°C C -0·01 -0· Collector Current - A C Figure 3. TIP32, TIP32A,TIP32B, TIP32C vs BASE CURRENT TCS632AB = -100 mA = -300 -1·0 -10 -100 I - Base Current - mA B Figure 2. TCS632AC -10 -1000 3 ...

Page 4

... TIP32, TIP32A,TIP32B, TIP32C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS -100 -10 -1·0 -0·1 -0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP32 TIP32A TIP32B TIP32C -1·0 -10 -100 V - Collector-Emitter Voltage - V CE Figure 4 ...

Related keywords