BD249CG ON Semiconductor, BD249CG Datasheet
BD249CG
Specifications of BD249CG
Related parts for BD249CG
BD249CG Summary of contents
Page 1
... AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR TO−218 CASE 340D 1 STYLE MARKING DIAGRAM AYWWG BD249C BD249C = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BD249C TO−218 30 Units/Rail BD249CG TO−218 30 Units/Rail (Pb−Free) Publication Order Number: BD249C/D ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note mA Collector−Emitter Cutoff Current ( Collector−Emitter Cutoff Current (V = Rated ...
Page 3
TURN−ON TIME +2 −11.0 V ≤ 100 mS DUTY CYCLE ≈ 2.0% TURN−OFF TIME +9 −11.0 V ≤ ...
Page 4
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor ...
Page 5
MJE180 INPUT BB1 VOLTAGE AND CURRENT WAVEFORMS 5.0 V INPUT VOLTAGE 0 0 COLLECTOR CURRENT −3 −10 V COLLECTOR VOLTAGE V (BR)CER NOTES and L2 are 10 mH, 0.11 W, ...
Page 6
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...