TIPL761-S Bourns, TIPL761-S Datasheet

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... AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIPL761 TIPL761A TIPL761 TIPL761A TIPL761 TIPL761A TIPL761, TIPL761A SOT-93 PACKAGE (TOP VIEW MDTRAAA SYMBOL VALUE UNIT 850 V V CBO ...

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... TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter CEO(sus) C sustaining voltage V = 850 V CE Collector-emitter V = 1000 CES cut-off current V = 850 1000 V CE Collector cut-off V = 400 CEO current V = 450 V CE ...

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... TUT 1 k Ω +5V 5X BY205-400 1 k Ω 2N2904 D44H11 47 Ω V 100 Ω A (90%) C 90% B 10% D (90%) E (10%) F (2%) TIPL761, TIPL761A +5V (on) µH 180 v cc BY205-400 V clamp = 400 V BE(off) Base Current Collector Voltage Collector Current > 10 Ω, C < 15 ns, R < 11.5 pF ...

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... TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 10 1·0 0·1 1· Collector Current - A C Figure 3. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1· 25°C C 1·15 1·05 0·95 0·85 0·75 0 0·2 0·4 0·6 0· Base Current - A B Figure 5 ...

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... THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 1·0 50% 20% 10% 5% 0·1 0% duty cycle = t1/t2 Read time at end of t1 · J(max) C D(peak Power Pulse Duration - s Figure 8. TIPL761, TIPL761A SAP741AB 1000 TCP741AE t1 t2 θJC · R θJC(max) θ ...