PN2222A T/R NXP Semiconductors, PN2222A T/R Datasheet - Page 2

• Manufacturer Part Number: PN2222A T/R
• Description: Transistors Bipolar - BJT TRANS SW TAPE WIDE PITCH
• Manufacturer: NXP Semiconductors

Specifications of PN2222A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 75 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 100 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 100 at 150 mA at 10 V
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2222A,116

NXP Semiconductors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and linear amplification.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: PN2907A.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Oct 11
PN2222A
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
SC-43A
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
≤ 25 °C
PINNING
handbook, halfpage
DESCRIPTION
CONDITIONS
PACKAGE
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54) and
symbol.
1
2
collector
base
emitter
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
75
40
6
600
800
200
500
+150
150
+150
MAM279
Product data sheet
MAX.
PN2222A
2
VERSION
SOT54
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1
3