BC337-25 T/R NXP Semiconductors, BC337-25 T/R Datasheet - Page 14

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BC337-25 T/R

Manufacturer Part Number
BC337-25 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC337-25 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
160 at 100 mA at 1 V
Maximum Power Dissipation
625 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC337-25,116
NXP Semiconductors
Fig 16. Package outline SOT54A
BC817_BC817W_BC337_6
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54A
D
5.2
5.0
A
d
0.48
0.40
b
E
3
1
2
0.66
0.55
b 1
IEC
b 1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
Rev. 06 — 17 November 2009
REFERENCES
0
4.2
3.6
E
A
5.08
e
JEITA
scale
2.5
2.54
e 1
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
14.5
12.7
5 mm
L
L 2
L 1
L
max.
1
3
(1)
L 2
3
2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
b
ISSUE DATE
c
97-05-13
04-06-28
e 1
e
SOT54A
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