TIPL762A-S Bourns, TIPL762A-S Datasheet

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TIPL762A-S

Manufacturer Part Number
TIPL762A-S
Description
Transistors Bipolar - BJT 1000V 6A NPN
Manufacturer
Bourns
Datasheet

Specifications of TIPL762A-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
300
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (V
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
R O D U C T
Rugged Triple-Diffused Planar Construction
6 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
1000 Volt Blocking Capability
120 W at 25°C Case Temperature
1: This value applies for t
E
= 0)
B
I N F O R M A T I O N
BE
= 0)
= 0)
p
≤ 10 ms, duty cycle ≤ 2%.
RATING
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
TIPL762
TIPL762A
TIPL762
TIPL762A
TIPL762
TIPL762A
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
V
V
V
V
T
I
P
CBO
CES
CEO
EBO
CM
I
T
1
2
3
C
stg
tot
j
TIPL762, TIPL762A
-65 to +150
-65 to +150
VALUE
1000
1000
850
850
400
450
120
10
12
6
MDTRAAA
UNIT
°C
°C
W
V
V
V
V
A
A
1

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TIPL762A-S Summary of contents

Page 1

... AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A TIPL762, TIPL762A SOT-93 PACKAGE (TOP VIEW MDTRAAA SYMBOL VALUE UNIT 850 V V CBO ...

Page 2

... TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter CEO(sus) C sustaining voltage V = 850 V CE Collector-emitter V = 1000 CES cut-off current V = 850 1000 V CE Collector cut-off V = 400 CEO current V = 450 V CE ...

Page 3

... TUT 1 k Ω +5V 5X BY205-400 1 k Ω 2N2904 D44H11 47 Ω V 100 Ω A (90%) C 90% B 10% D (90%) E (10%) F (2%) TIPL762, TIPL762A +5V (on) µH 180 v cc BY205-400 V clamp = 400 V BE(off) Base Current Collector Voltage Collector Current > 10 Ω, C < 15 ns, R < 11.5 pF ...

Page 4

... TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 1·0 0·1 1· Collector Current - A C Figure 3. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 4·0 3·0 2·0 1· 0·5 1·0 1· Base Current - A B Figure 5. 4 TYPICAL CHARACTERISTICS ...

Page 5

... V CE TIPL762 V = 850 V CE -80 -60 -40 - 100 120 140 T - Case Temperature - °C C Figure 7. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA = 100 µ TIPL762 p DC Operation TIPL762A 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 8. TIPL762, TIPL762A TCP762AF SAP762AB 1000 5 ...

Page 6

... TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS 1·0 0·1 0·01 0·001 6 THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 50% 20% 10 duty cycle = t1/t2 0% Read time at end of t1 θ · J(max) C D(peak) R θ Power Pulse Duration - s 1 Figure 9 ...

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