BC817-40E6327 Infineon Technologies, BC817-40E6327 Datasheet - Page 4
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BC817-40E6327
Manufacturer Part Number
BC817-40E6327
Description
Transistors Bipolar - BJT NPN 45 V 500 mA
Manufacturer
Infineon Technologies
Datasheet
1.BC_817K-16W_H6327.pdf
(11 pages)
Specifications of BC817-40E6327
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
170 MHz
Dc Collector/base Gain Hfe Min
250
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
500 mA
Maximum Power Dissipation
330 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
C
CB
EB
= 50 mA, V
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
CE
= 5 V, f = 100 MHz
A
= 25°C, unless otherwise specified
4
Symbol
f
C
C
T
cb
eb
min.
-
-
-
BC817K.../BC818K...
Values
typ.
170
40
3
max.
2011-09-19
-
-
-
Unit
MHz
pF