TIP33C-S Bourns, TIP33C-S Datasheet

no-image

TIP33C-S

Manufacturer Part Number
TIP33C-S
Description
Transistors Bipolar - BJT 100V 10A NPN
Manufacturer
Bourns
Datasheet

Specifications of TIP33C-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
300
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
R O D U C T
Designed for Complementary Use with the
TIP34 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
E
S
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= 20 V.
RATING
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
TIP33
TIP33A
TIP33B
TIP33C
TIP33
TIP33A
TIP33B
TIP33C
TIP33, TIP33A, TIP33B, TIP33C
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
1
2
3
CBO
CEO
EBO
CM
T
I
I
T
C
stg
B
tot
tot
L
j
C
B(on)
2
= 0.4 A, R
-65 to +150
-65 to +150
VALUE
62.5
100
120
140
100
250
3.5
80
40
60
80
10
15
80
5
3
BE
= 100 Ω,
MDTRAAA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

Related parts for TIP33C-S

TIP33C-S Summary of contents

Page 1

... Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIP33 TIP33A TIP33B TIP33C TIP33 TIP33A TIP33B TIP33C TIP33, TIP33A, TIP33B, TIP33C SOT-93 PACKAGE (TOP VIEW MDTRAAA SYMBOL VALUE UNIT 80 100 V V CBO ...

Page 2

... TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter V = 100 CES cut-off current V = 120 140 V CE Collector cut-off CEO current ...

Page 3

... BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 25°C C 0· Collector Current - A C Figure 3. TIP33, TIP33A, TIP33B, TIP33C vs BASE CURRENT TCS633AB 0·1 1· Base Current - A B Figure 2. ...

Page 4

... TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 0·01 100 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP33 TIP33A TIP33B TIP33C 1·0 ...

Related keywords