BC807-40W T/R NXP Semiconductors, BC807-40W T/R Datasheet - Page 15
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BC807-40W T/R
Manufacturer Part Number
BC807-40W T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16_TR.pdf
(19 pages)
Specifications of BC807-40W T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.5 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC807-40W,115
NXP Semiconductors
Fig 17. Package outline SOT54 variant
BC807_BC807W_BC327_6
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
SOT54 variant
OUTLINE
VERSION
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
Rev. 06 — 17 November 2009
REFERENCES
0
4.2
3.6
E
2.54
A
e
JEITA
scale
2.5
1.27
e 1
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
14.5
12.7
5 mm
L
L 2
L 1
L 1
max
2.5
(1)
max
2.5
L 2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
SOT54 variant
04-06-28
05-01-10
b
c
e 1
e 1
e
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