TIP36-S Bourns, TIP36-S Datasheet

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TIP36-S

Manufacturer Part Number
TIP36-S
Description
Transistors Bipolar - BJT 40V 25A PNP
Manufacturer
Bourns
Datasheet

Specifications of TIP36-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
300
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
R O D U C T
Designed for Complementary Use with the
TIP35 Series
125 W at 25°C Case Temperature
25 A Continuous Collector Current
40 A Peak Collector Current
Customer-Specified Selections Available
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
E
S
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= -20 V.
RATING
C
B
E
Pin 2 is in electrical contact with the mounting base.
PNP SILICON POWER TRANSISTORS
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36, TIP36A, TIP36B, TIP36C
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
CBO
CEO
EBO
CM
T
I
I
T
1
2
3
C
stg
B
tot
tot
L
j
C
B(on)
2
= -0.4 A, R
-65 to +150
-65 to +150
VALUE
-100
-120
-140
-100
125
250
-80
-40
-60
-80
-25
-40
3.5
90
-5
-5
BE
= 100 Ω,
MDTRAAA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

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TIP36-S Summary of contents

Page 1

... Specifications are subject to change without notice. PNP SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36, TIP36A, TIP36B, TIP36C SOT-93 PACKAGE (TOP VIEW MDTRAAA SYMBOL VALUE UNIT -80 -100 V V CBO ...

Page 2

... TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter -30 mA (BR)CEO C breakdown voltage (see Note - Collector-emitter V = -100 CES cut-off current V = -120 -140 V CE Collector cut-off CEO current ...

Page 3

... -0·01 -10 -100 -0·001 BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 25°C C -0·1 -1·0 - Collector Current - A C Figure 3. TIP36, TIP36A, TIP36B, TIP36C vs BASE CURRENT TCS636AB -0·01 -0·1 -1·0 - Base Current - A B Figure 2 ...

Page 4

... TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS -100 -10 -1·0 -0·1 -0·01 140 120 100 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP36 TIP36A TIP36B TIP36C -1· ...

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