BC856BDW1T3 ON Semiconductor, BC856BDW1T3 Datasheet

BC856BDW1T3

Manufacturer Part Number

BC856BDW1T3

Description

Transistors Bipolar - BJT SS GP XSTR PNP 65V

Manufacturer

ON Semiconductor

Datasheet

1.SBC857BDW1T1G.pdf (7 pages)

Specifications of BC856BDW1T3

Product Category

Transistors Bipolar - BJT

Configuration

Dual

Transistor Polarity

PNP

Collector- Base Voltage Vcbo

- 80 V

Collector- Emitter Voltage Vceo Max

- 65 V

Emitter- Base Voltage Vebo

5 V

Collector-emitter Saturation Voltage

- 65 V

Maximum Dc Collector Current

0.1 A

Gain Bandwidth Product Ft

100 MHz

Dc Collector/base Gain Hfe Min

150 at 10 uA at 5 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-363

Continuous Collector Current

- 100 mAdc

Maximum Power Dissipation

380 mW

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

10000

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BC856BDW1T3G

Manufacturer:

Quantity:

30 000

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BC856BDW1T1G,

SBC856BDW1T1G Series,

BC857BDW1T1G,

SBC857BDW1T1G Series,

BC858CDW1T1G Series

Dual General Purpose

Transistors

PNP Duals

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in

*For additional information on our Pb−Free strategy and soldering details, please

 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 8

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current −Continuous

Total Device Dissipation Per Device

Thermal Resistance,

Junction and Storage Temperature

Range

These transistors are designed for general purpose amplifier

Site and Control Change Requirements

Compliant*

AEC−Q101 Qualified and PPAP Capable

S Prefix for Automotive and Other Applications Requiring Unique

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

BC856, SBC856

BC857, SBC857

BC858

BC856, SBC856

BC857, SBC857

BC858

FR−5 Board (Note 1)

Derate Above 25C

Junction−to−Ambient

= 25C

Characteristic

Rating

Preferred Devices

Symbol

, T

CEO

CBO

EBO

qJA

stg

−55 to +150

Value

−100

−5.0

Max

−65

−45

−30

−80

−50

−30

380

250

328

3.0

mW/C

mAdc

C/W

Unit

C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

(Note: Microdot may be in either location)

ORDERING INFORMATION

(3)

(4)

= Specific Device Code

= Date Code

= Pb−Free Package

MARKING DIAGRAM

http://onsemi.com

x = B, F, G, or L

(See Ordering Information)

SOT−363/SC−88

CASE 419B

STYLE 1

(5)

3x MG

Publication Order Number:

(2)

BC856BDW1T1/D

(1)

(6)

Related parts for BC856BDW1T3

BC856BDW1T3 Summary of contents

Page 1

... Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 ...

Page 2

SBC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C BC856, SBC856 Series BC857, SBC857 Series BC858 Series Collector −Emitter Breakdown Voltage (I = −10 mA BC856, ...

Page 3

SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856/SBC856 25C A 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current ...

Page 4

SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/SBC857/BC858 2 - 25C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 7. Normalized ...

Page 5

SBC857BDW1T1G Series, BC858CDW1T1G Series 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0 1.0 -200 1 s -100 T = 25 25C - BC558 BC557 -10 BC556 -5.0 BONDING WIRE ...

Page 6

... SBC857BDW1T1G Series, BC858CDW1T1G Series ORDERING INFORMATION Device BC856BDW1T1G SBC856BDW1T1G BC856BDW1T3G SBC856BDW1T3G BC857BDW1T1G SBC857BDW1T1G BC857CDW1T1G SBC857CDW1T1G BC858CDW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Device Marking Package 3B SOT− ...

Page 7

... A1 0.40 0.0157 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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