BC846BW-7 Diodes Inc., BC846BW-7 Datasheet - Page 2

• Manufacturer Part Number: BC846BW-7
• Description: Transistors Bipolar - BJT NPN BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC846BW-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Electrical Characteristics
Collector-Base Breakdown Voltage (Note 6)
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
(Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Voltage (Note 6)
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS30250 Rev. 9 - 2
250
300
200
150
100
50
6. Short duration pulse test used to minimize self-heating effect.
0
0
25
Characteristic
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
A
50
Ambient Temperature
75
Current Gain Group A
100 125
BC846, BC847
@T
(Note 6)
A
= 25°C unless otherwise specified
BC846
BC847
BC848
BC846
BC847
BC848
BC848
150
C
B
175
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
I
h
CBO
CBO
NF
200
CBO
f
FE
T
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2 of 3
Min
110
200
420
580
100
80
50
30
65
45
30
—
—
—
—
—
—
—
6
5
Typ
180
290
520
200
700
900
660
300
3.0
90
0.4
0.3
0.2
—
—
—
—
—
—
—
—
—
—
—
0.1
0
0.1
I
I
C
B
= 20
Fig. 2 Collector Emitter Saturation Voltage
Max
220
450
800
250
600
700
770
5.0
4.5
15
10
—
—
—
—
—
—
—
—
—
I , COLLECTOR CURRENT (mA)
C
T = 150°C
A
1
vs. Collector Current
MHz
Unit
mV
mV
mV
nA
µA
pF
dB
—
V
V
V
T = 25°C
10
A
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
V
R
f = 1.0kHz, Δf = 200Hz
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 2.0kΩ,
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, I
Test Condition
C
BC846AW - BC848CW
100
C
B
T = -50°C
B
= 0
B
B
A
C
C
C
A
C
= 200µA,
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA
© Diodes Incorporated
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