MT46H32M16LFBF-5 IT:B TR Micron Technology Inc, MT46H32M16LFBF-5 IT:B TR Datasheet - Page 62
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MT46H32M16LFBF-5 IT:B TR
Manufacturer Part Number
MT46H32M16LFBF-5 IT:B TR
Description
IC DDR SDRAM 512MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M32LFCX-5B.pdf
(98 pages)
Specifications of MT46H32M16LFBF-5 IT:B TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (32Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 24: Consecutive READ Bursts
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
OUT
t
READ
Bank,
READ
Bank,
Col b
Col b
AC,
T2
T2
1
62
t
DQSCK, and
D
T2n
T2n
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
D
T3n
T3n
OUT
OUT
D
D
T4
NOP
T4
NOP
OUT
OUT
D
T4n
T4n
D
OUT
OUT
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
NOP
T5
NOP
D
OUT
OUT
T5n
T5n
D
D
OUT
OUT
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