IS42S32800D-75ETLI ISSI, Integrated Silicon Solution Inc, IS42S32800D-75ETLI Datasheet - Page 33

• Manufacturer Part Number: IS42S32800D-75ETLI
• Description: IC SDRAM 256MBIT 133MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-75ETLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800D, IS45S32800D
Notes:
1) CAS latency = 2, Burst Length = 4
2) x32: A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com
Rev. C
12/01/09
ALTERNATING BANK READ ACCESSES
DQM0 - DQM3
COMMAND
A0-A9, A11
BA0, BA1
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
COLUMN m
BANK 0
READ
T2
t
CMH
t
CH
(2)
CAS Latency - BANK 0
T3
NOP
t
LZ
t
AC
BANK 3
ACTIVE
ROW
ROW
T4
D
OUT
t
OH
m
t
AC
t
RCD
- BANK 3
ENABLE AUTO PRECHARGE
T5
D
NOP
OUT
t
OH
m+
t
1
AC
COLUMN b
BANK 3
READ
T6
D
OUT
t
OH
m+
t
(2)
RP
t
2
AC
CAS Latency - BANK 3
- BANK 0
T7
D
NOP
OUT
t
OH
m+
t
3
AC
BANK 0
ACTIVE
ROW
T8
ROW
DON'T CARE
D
OUT
t
OH
b
t
RCD
t
AC
- BANK 0
33