M45PE40-VMP6TG NUMONYX, M45PE40-VMP6TG Datasheet - Page 38

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M45PE40-VMP6TG

Manufacturer Part Number
M45PE40-VMP6TG
Description
IC FLASH 4MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M45PE40-VMP6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Cell Type
NOR
Density
4Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFQFPN EP
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M45PE40-VMP6TG
M45PE40-VMP6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M45PE40-VMP6TG
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M45PE40-VMP6TG
Manufacturer:
ST
0
DC and AC parameters
38/49
Table 13.
1. Details of how to find the date of marking are given in application note, AN1995.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
t
CHDX
CHSH
SHCH
PW
DVCH
CLQV
CLQX
CH
SLCH
CHSL
SHSL
THSL
SHTL
DP
PP
CL
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
CH
f
f
PE
SE
C
R
(2)
(2)
(3)
(4)
(4)
(3)
(3)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
AC characteristics (33 MHz operation)
CSS
DSU
t
CSH
t
Alt
CLH
33 MHz only available for products marked since week 40 of 2005
CLL
DIS
HO
f
DH
t
C
V
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR,
RDID
Clock frequency for read instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid
Output hold time
Top Sector Lock setup time
Top Sector Lock hold time
S to deep power-down
S High to standby power mode
Page write cycle time (256 bytes)
Page write cycle time (n bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Test conditions specified in
Parameter
(3)
(peak to peak)
C
.
Table 8
and
0.03
D.C.
D.C.
Min
100
200
13
13
10
10
50
3
5
5
5
0
Table 9
n*0.8/256
n*0.8/256
10.2+
0.4+
Typ
1.2
11
10
1
(1)
Max
33
20
12
12
30
25
20
3
5
5
M45PE40
MHz
MHz
Unit
V/ns
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s

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