M25PE80-VMP6TG NUMONYX, M25PE80-VMP6TG Datasheet - Page 53

• Manufacturer Part Number: M25PE80-VMP6TG
• Description: IC FLASH 8MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE80-VMP6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFQFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE80-VMP6TG; M25PE80-VMP6TGTR

M25PE80
Table 23.
1.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
5. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
6.
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
PW
CH
SLCH
CHSL
SHSL
DP
t
CL
PP
See: Important note on page
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
SSE
t
CH
int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
t
f
f
PE
SE
BE
W
C
R
(2)
(2)
(3)
(4)
(5)
(3)
+ t
(3)
(4)
(4)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
CLH
CLL
DIS
HO
f
DH
t
C
AC characteristics (50 MHz operation,
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for read instructions
Clock high time
Clock low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock low to output valid
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S high to standby mode
Write status register cycle time
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Subsector erase cycle time
Bulk erase cycle time
6.
Test conditions specified in
(2)
Parameter
(peak to peak)
C
.
T9HX (0.11µm) process
Table 17
D.C.
D.C.
Min
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 18
int(n/8) × 0.025
(1)
Typ
0.8
11
10
50
10
3
1
)
DC and AC parameters
(6)
Max
150
50
33
30
15
23
20
20
8
8
3
3
5
MHz
MHz
V/ns
Unit
53/66
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s