M29W400FB55N3F NUMONYX, M29W400FB55N3F Datasheet - Page 34

• Manufacturer Part Number: M29W400FB55N3F
• Description: IC FLASH 4MBIT 55NS 3V 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W400FB55N3F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8 or 256K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 14. Read mode AC waveforms
Table 13.
1. See
2. Sampled only, not 100% tested.
34/56
Symbol
t
t
t
t
GLQX
EHQZ
GHQZ
ELQX
t
t
t
t
t
t
t
t
t
t
t
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
A0-A18/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
BYTE
(2)
(2)
(2)
(2)
Table 19.: Ordering information scheme
t
t
t
t
t
t
FHQV
ELFH
FLQZ
ELFL
t
t
ACC
t
t
t
t
Alt
OLZ
t
Read AC characteristics
RC
OE
OH
CE
HZ
DF
LZ
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output
Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or
Address Transition to Output
Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
tELBL/tELBH
Parameter
tAVQV
tBHQV
tELQX
for combinations.
tELQV
tGLQX
tGLQV
tAVAV
VALID
Test condition
E = V
E = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
tBLQZ
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
VALID
5A/55 ns
tGHQX
tGHQZ
M29W800FT/B and
55
55
55
30
25
25
25
30
0
0
0
5
M29W400FT/B
(1)
tEHQZ
7A/70 ns
70
70
70
30
25
25
25
30
0
0
0
5
tEHQX
tAXQX
(1)
AI05448
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns