M29W160EB70N3F NUMONYX, M29W160EB70N3F Datasheet - Page 29

• Manufacturer Part Number: M29W160EB70N3F
• Description: IC FLASH 16MBIT 70NS 3V 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W160EB70N3F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP
• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 125C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package outline, bottom view
Table 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data
Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
A
D
E
b
e
E
11.00
0.48
0.80
7.00
1.00
13.0
7.00
2.00
3.00
0.50
0.50
Typ
—
—
—
BALL "A1"
FD
E1
FE
A
millimeters
10.90
12.90
e
0.43
0.55
Min
—
—
—
—
—
—
—
—
—
—
D1
D
SD
b
11.10
13.10
Max
1.40
0.53
0.65
0.15
—
—
—
—
—
—
—
—
A1
SE
A2
0.0196
0.0196
0.018
0.031
0.433
0.275
0.039
0.511
0.275
0.078
0.118
Typ
—
—
—
M29W160ET, M29W160EB
BGA-Z23
inches
0.016
0.021
0.429
0.507
Min
—
—
—
—
—
—
—
—
—
—
ddd
0.0059
0.055
0.025
0.437
0.515
Max
—
—
—
—
—
—
—
—
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