M29W160EB70N3E NUMONYX, M29W160EB70N3E Datasheet - Page 23

• Manufacturer Part Number: M29W160EB70N3E
• Description: IC FLASH 16MB 70NS 3V 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W160EB70N3E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 12. Read Mode AC Waveforms
Table 12. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
t
t
t
Symbol
t
GHQZ
ELQX
GLQX
EHQZ
t
t
t
t
t
t
t
t
t
t
t
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
A0-A19/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
2. 70 ns becomes 80 ns if the 80 ns device code is used.
BYTE
(1)
(1)
(1)
(1)
t
t
t
t
t
t
FHQV
ELFH
FLQZ
ELFL
t
t
ACC
t
t
Alt
OLZ
t
t
t
OH
RC
CE
OE
HZ
DF
LZ
tELBL/tELBH
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
Test Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
G = V
E = V
tBLQZ
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
VALID
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
M29W160ET, M29W160EB
tGHQX
tGHQZ
70/7A/80
M29W160E
tEHQZ
70
70
70
25
25
25
25
30
0
0
0
5
(2)
tEHQX
tAXQX
90
90
90
90
35
30
30
30
40
0
0
0
5
AI02922
Unit
23/42
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns