M29W800DB70N6E NUMONYX, M29W800DB70N6E Datasheet - Page 21
![IC FLASH 8MBIT 70NS 48TSOP](/photos/7/28/72862/m29w800db70n6e_sml.jpg)
M29W800DB70N6E
Manufacturer Part Number
M29W800DB70N6E
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W800DB70ZE6F.pdf
(52 pages)
Specifications of M29W800DB70N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Access Time
70ns
Memory Configuration
1M X 8, 512K X 16
Interface Type
CFI, Parallel
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5035
497-5035
497-5035
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W800DB70N6E
Manufacturer:
ST
Quantity:
429
Part Number:
M29W800DB70N6E
Manufacturer:
MICRON
Quantity:
20 000
Table 4.
1. X don’t care, PA program address, PD program data, BA any address in the block.
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
All values in the table are in hexadecimal format.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is V
Command
Commands, 16-bit mode, BYTE = V
6+
1
3
3
4
3
2
2
6
1
1
1
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
555
555
555
555
555
555
55
X
X
X
X
X
1st
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
2AA
2AA
2AA
2AA
2AA
2AA
PA
IL
X
or DQ15 when BYTE is V
2nd
PD
55
55
55
55
00
55
55
IH
(1)
555
555
555
555
555
X
Bus write operations
3rd
F0
A0
90
20
80
80
IH
.
555
555
PA
4th
PD
AA
AA
2AA
2AA
5th
55
55
555
BA
6th
21/52
10
30