NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 18

• Manufacturer Part Number: NAND128W3A2BN6F
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 16KByte x 1024
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 6. Address Insertion, x8 Devices
Note: 1. A8 is set Low or High by the 00h or 01h Command, see
Table 7. Address Insertion, x16 Devices
Note: 1. A8 is Don’t Care in x16 devices.
Table 8. Address Definitions
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Bus Cycle
Cycle
4
Bus
4
2
3
1
th(4)
2
3
1
th(4)
nd
rd
2. Any additional address input cycles will be ignored.
3. The 4th cycle is only required for 512Mb and 1Gb devices.
st
2. Any additional address input cycles will be ignored.
3. The 01h Command is not used in x16 devices.
4. The 4th cycle is only required for 512Mb and 1Gb devices.
nd
rd
st
I/O15
I/O8-
X
X
X
X
I/O7
A16
A24
V
A7
IL
A14 - A26
Address
A9 - A26
A9 - A13
A0 - A7
I/O7
A16
A24
A8
V
A7
IL
I/O6
A15
A23
V
A6
IL
I/O6
A15
A23
A6
V
IL
I/O5
A14
A22
V
A5
IL
I/O5
A14
A22
V
A5
IL
Pointer Operations
I/O4
A13
A21
V
A4
IL
A8 is set Low or High by the 00h or 01h Command, and is
I/O4
A13
A21
V
A4
IL
I/O3
A12
A20
V
A3
IL
section.
I/O3
A12
A20
V
A3
Don’t Care in x16 devices
IL
Column Address
Address in Block
Block Address
Page Address
Definition
I/O2
A11
A19
V
A2
IL
I/O2
A19
A11
V
A2
IL
I/O1
A10
A18
A26
A1
I/O1
A10
A18
A26
A1
I/O0
A17
A25
I/O0
A17
A25
A0
A9
A0
A9