M29W640GL70ZF6E NUMONYX, M29W640GL70ZF6E Datasheet - Page 18

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M29W640GL70ZF6E

Manufacturer Part Number
M29W640GL70ZF6E
Description
IC FLASH 64MBIT 70NS 64TBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GL70ZF6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Package
64TBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
64KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640GL70ZF6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M29W640GL70ZF6E
Quantity:
162
2.12
2.13
18/90
V
V
The command interface is disabled when the V
voltage, V
during power-up, power-down and power surges. If the program/erase controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1 μF capacitor should be connected between the V
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during program and erase operations, I
V
V
must be both connected to the system ground.
CC
SS
CC
SS
is the reference for all voltage measurements. The device features two V
provides the power supply for all operations (read, program and erase).
ground
supply voltage
LKO
. This prevents bus write operations from accidentally damaging the data
CC
supply voltage is less than the lockout
CC
supply voltage pin and the V
SS
pins which
SS
CC3
.

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