M28W160CB70N6E NUMONYX, M28W160CB70N6E Datasheet - Page 37

• Manufacturer Part Number: M28W160CB70N6E
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M28W160CB70N6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Memory Configuration: 1M X 16
• Ic Interface Type: Parallel
• Access Time: 70ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 29. Device Geometry Definition
Offset Word
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
2Eh
2Fh
30h
31h
32h
33h
34h
001Eh
001Eh
0015h
0001h
0000h
0002h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
Region 1 Information
Number of identical-size erase block = 001Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase block = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 001Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of bytes
Description
M28W160CT, M28W160CB
n
64 KByte
64 KByte
2 MByte
8 KByte
8 KByte
Async.
Value
x16
31
31
4
2
8
8
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