M27C801-100B1 STMicroelectronics, M27C801-100B1 Datasheet - Page 8

• Manufacturer Part Number: M27C801-100B1
• Description: IC OTP 8MBIT 100NS 32DIP
• Manufacturer: STMicroelectronics

Specifications of M27C801-100B1

• Format - Memory: EPROMs
• Memory Type: OTP EPROM
• Memory Size: 8M (1M x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (0.600", 15.24mm)
• Organization: 1Mx8
• Interface Type: Parallel
• In System Programmable: External
• Access Time (max): 100ns
• Package Type: PDIP
• Reprogramming Technique: OTP
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Supply Current: 50mA
• Pin Count: 32
• Mounting: Through Hole
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA
• Current, Operating: 35 mA
• Current, Output, Leakage: ±10
• Current, Supply: 35 mA (Max.)
• Density: 8M
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 100 ns
• Time, Fall: ≤20 ns
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V
• Voltage, Input, Low Level: 0.80 V (Max.)
• Voltage, Output, High: 3.6 V (TTL), 4.3 V (CMOS)
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 5 V
• Access Time: 45ns
• Low Power Consumption: - Active current 35mA at 5 MHz - Standby current 100 μA
• Programming Voltage: 12.75 V ± 0.25 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 4.5V To 5V
• Memory Case Style: DIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1687-5

Device description
2
2.1
2.2
2.3
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Device description
The operating modes of the M27C801 are listed in the Operating Modes table. A single
power supply is required in Read mode. All inputs are TTL levels except for GV
on A9 for Electronic Signature and Margin Mode Set or Reset.
Table 2.
1. X = V
Read mode
The M27C801 has two control functions, both of which must be logically active in order to
obtain data at the outputs. Chip Enable (E) is the power control and should be used for
device selection. Output Enable (G) is the output control and should be used to gate data to
the output pins, independent of device selection. Assuming that the addresses are stable,
the address access time (t
available at the output after a delay of t
been low and the addresses have been stable for at least t
Standby mode
The M27C801 has a standby mode which reduces the supply current from 35mA to 100µA.
The M27C801 is placed in the standby mode by applying a CMOS high signal to the E input.
When in the standby mode, the outputs are in a high impedance state, independent of the
GV
Two-line output control
Because EPROMs are usually used in larger memory arrays, the product features a 2 line
control function which accommodates the use of multiple memory connection. The two line
control function allows:
●
●
For the most efficient use of these two control lines, E should be decoded and used as the
primary device selecting function, while G should be made a common connection to all
devices in the array and connected to the READ line from the system control bus. This
Read
Output Disable
Program
Program Inhibit
Standby
Electronic signature
PP
the lowest possible memory power dissipation,
complete assurance that output bus contention will not occur.
input.
IH
or V
Mode
Operating modes
IL
, V
ID
= 12 V ± 0.5 V.
AVQV
) is equal to the delay from E to output (t
(1)
V
IL
V
V
V
V
V
Pulse
E
IH
IH
IL
IL
IL
GLQV
from the falling edge of G, assuming that E has
GV
V
V
V
V
V
X
PP
PP
IH
IL
IL
pp
AVQV
-t
GLQV
V
A9
X
X
X
X
X
ID
.
ELQV
). Data is
PP
Data Out
Data In
Q7-Q0
Codes
M27C801
and 12V
Hi-Z
Hi-Z
Hi-Z