NAND08GW3F2AN6E NUMONYX, NAND08GW3F2AN6E Datasheet - Page 60

• Manufacturer Part Number: NAND08GW3F2AN6E
• Description: IC FLASH 8GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3F2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC and AC parameters
12.1
60/65
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
Figure 43. Ready/Busy AC waveform
Figure 44. Ready/Busy load circuit
44,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 43
and
Figure 45
ready V DD
DEVICE
V SS
V DD
R P min
R P min
t f
show the electrical characteristics for the Ready/Busy
=
V OL
(
-------------------------------------------------------------
V DDmax V OLmax
=
P
-------------------------- -
8mA
I OL
busy
can be calculated using the following equation:
r
R P
3.2V
.
–
+
RB
+
Open drain output
I L
I L
NAND08GW3F2A, NAND16GW3F2A
t r
)
V OH
ibusy
NI3087B
AI07563B
P