CAT93C76YI-GT3 ON Semiconductor, CAT93C76YI-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT93C76YI-GT3
• Description: IC EEPROM 8KB 3MHZ 8-TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT93C76YI-GT3

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 8K (1K x 8 or 512 x 16)
• Speed: 3MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
2. Output shorted for no more than one second.
3. These parameters are tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on I/O pins from −1 V to V
5. 0 mA is defined as less than 900 nA.
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Table 4. PIN CAPACITANCE
Table 1. ABSOLUTE MAXIMUM RATINGS
Temperature Under Bias
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
V
Lead Soldering Temperature (10 seconds)
Output Short Circuit Current (Note 2)
Symbol
voltage on output pins is V
I
CC
V
V
V
V
LORG
V
V
I
I
I
I
V
V
I
CC1
CC2
I
SB1
SB2
LTH
I
OL1
OH1
OL2
OH2
N
LO
V
IH1
IH2
IL1
IL2
LI
Symbol
T
with Respect to Ground
END
ZAP
C
DR
C
Symbol
(Notes 3, 4)
OUT
IN
(Note 3)
(Note 3)
(Note 3)
Power Supply Current (Write)
Power Supply Current (Read)
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16 Mode)
Input Leakage Current
Output Leakage Current
ORG Pin Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch−Up
CC
Parameter
+0.5 V, which may overshoot to V
(Note 3)
Parameters
Test
4.5 V v V
1.8 V v V
4.5 V v V
1.8 V v V
CS = 0 V, ORG = Float or V
V
(Note 2)
ORG = GND or ORG = V
OUT
f
f
SK
SK
CS = 0 V, ORG = GND
4.5 V v V
4.5 V v V
MIL−STD−883, Test Method 1033
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 3015
1.8 V v V
1.8 V v V
= 1 MHz, V
= 1 MHz, V
(V
Test Conditions
= 0 V to V
http://onsemi.com
V
CC
CC
CC
CC
IN
CC
Reference Test Method
v 5.5 V, I
< 4.5 V, I
= 0 V to V
v 5.5 V, I
JEDEC Standard 17
< 4.5 V, I
= +1.8 V to +5.5 V unless otherwise specified.)
CC
CC
CC
CC
CC
CC
2
CC
CC
v 5.5 V
v 5.5 V
+2.0 V for periods of less than 20 ns.
< 4.5 V
< 4.5 V
, CS = 0 V
OH
Conditions
OH
V
OL
= 5.0 V
= 5.0 V
CC
OL
V
OUT
IN
= −100 mA
= −400 mA
= 100 mA
= 2.1 mA
= 0 V
= 0 V
CC
CC
CC
−2.0 to +V
V
V
+ 1 V.
CC
CC
Min
−0.1
Min
−55 to +125
−65 to +150
−2.0 to +7.0
2.4
2
0
− 0.2
Ratings
x 0.7
300
100
CC
+2.0
0 (Note 5)
0 (Note 5)
0 (Note 5)
1,000,000
Typ
2,000
Typ
300
Min
100
100
1
2
1
Max
V
V
V
CC
5
5
CC
CC
Max
500
0.8
0.4
0.1
10
10
10
10
10
3
x 0.2
Units
+ 1
+ 1
mA
Cycles / Byte
°C
°C
°C
V
V
Units
Years
mA
Units
V
pF
pF
Units
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V