AT28HC256-90JI Atmel, AT28HC256-90JI Datasheet - Page 3
![IC EEPROM 256KBIT 90NS 32PLCC](/photos/7/21/72190/453-32-plcc_sml.jpg)
AT28HC256-90JI
Manufacturer Part Number
AT28HC256-90JI
Description
IC EEPROM 256KBIT 90NS 32PLCC
Manufacturer
Atmel
Datasheet
1.AT28HC256-12JU.pdf
(24 pages)
Specifications of AT28HC256-90JI
Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
256K (32K x 8)
Speed
90ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-PLCC
Density
256Kb
Interface Type
Parallel
Organization
32Kx8
Access Time (max)
90ns
Write Protection
Yes
Data Retention
10Year
Operating Supply Voltage (typ)
5V
Package Type
PLCC
Operating Temp Range
-40C to 85C
Supply Current
80mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28HC25690JI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT28HC256-90JI
Manufacturer:
ATMEL
Quantity:
1 251
Company:
Part Number:
AT28HC256-90JI
Manufacturer:
PHIL
Quantity:
1 255
3. Block Diagram
4. Device Operation
4.1
4.2
4.3
4.4
0007N–PEEPR–9/09
Read
Byte Write
Page Write
DATA Polling
The AT28HC256 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a
write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last.
The data is latched by the first rising edge of CE or WE. Once a byte write has been started it
will automatically time itself to completion. Once a programming operation has been initiated
and for the duration of t
The page write operation of the AT28HC256 allows 1 to 64 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 63 additional
bytes. Each successive byte must be written within 150 µs (t
t
programming operation. All bytes during a page write operation must reside on the same page
as defined by the state of the A6 - A14 inputs. That is, for each WE high to low transition dur-
ing the page write operation, A6 - A14 must be the same.
The A0 to A5 inputs are used to specify which bytes within the page are to be written. The
bytes may be loaded in any order and may be altered within the same load period. Only bytes
which are specified for writing will be written; unnecessary cycling of other bytes within the
page does not occur.
The AT28HC256 features DATA Polling to indicate the end of a write cycle. During a byte or
page write cycle an attempted read of the last byte written will result in the complement of the
written data to be presented on I/O7. Once the write cycle has been completed, true data is
valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime
during the write cycle.
BLC
limit is exceeded the AT28C256 will cease accepting data and commence the internal
WC
, a read operation will effectively be a polling operation.
BLC
) of the previous byte. If the
AT28HC256
3