AT45D011-SI Atmel, AT45D011-SI Datasheet - Page 2

IC FLASH 1MBIT 15MHZ 8SOIC

AT45D011-SI

Manufacturer Part Number
AT45D011-SI
Description
IC FLASH 1MBIT 15MHZ 8SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT45D011-SI

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
1M (512 pages x 264 bytes)
Speed
15MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT45D011SI
serial interface to sequentially access its data. The simple
serial interface facilitates hardware layout, increases sys-
tem reliability, minimizes switching noise, and reduces
package size and active pin count. The device is optimized
for use in many commercial and industrial applications
where high density, low pin count, low voltage, and low
power are essential. Typical applications for the DataFlash
are digital voice storage, image storage, and data storage.
The device operates at clock frequencies up to 15 MHz
with a typical active read current consumption of 15 mA.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45D011 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory
Architecture Diagram illustrates the breakdown of each
2
RDY/BUSY
RESET
GND
VCC
SCK
WP
CS
AT45D011
PAGE (264 BYTES)
SI
BUFFER (264 BYTES)
FLASH MEMORY ARRAY
I/O INTERFACE
To allow for simple in-system reprogrammability, the
AT45D011 does not require high input voltages for
programming. The device operates from a single power
supply, 4.5V to 5.5V, for both the program and read opera-
tions. The AT45D011 is enabled through the chip select pin
(CS) and accessed via a three-wire interface consisting of
the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page
by page basis; however, the optional erase operations can
be performed at the block or page level.
SO

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