MT46V32M8TG-5B:G TR Micron Technology Inc, MT46V32M8TG-5B:G TR Datasheet - Page 82

• Manufacturer Part Number: MT46V32M8TG-5B:G TR
• Description: IC DDR SDRAM 256MBIT 5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M8TG-5B:G TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1027-2

Figure 45:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
and WRITE commands may be to different devices, in which case
the PRECHARGE command could be applied earlier.
DI
b
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
80
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T4
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
(a or all)
Bank,
T5
PRE
©2003 Micron Technology, Inc. All rights reserved.
t
WR is not required, and
t RP
T6
NOP
Operations
Don’t Care