MT46V32M16FN-5B:F TR Micron Technology Inc, MT46V32M16FN-5B:F TR Datasheet - Page 78

• Manufacturer Part Number: MT46V32M16FN-5B:F TR
• Description: IC DDR SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M16FN-5B:F TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 43:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; two data elements are written.
3. One subsequent element of data-in is applied in the programmed order following DI b.
4.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T2 and T2n (nominal case) to register DM.
7. If the burst of 8 is used, DM and DQS are required at T3 and T3n because the READ com-
t
mand will not mask these two data elements.
DI
WTR is referenced from the first positive CK edge after the last data-in pair.
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
t
WTR
T2n
78
Bank a,
READ
Col n
T3
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
CL = 2
CL = 2
T4
NOP
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T5
NOP
DO
DO
DO
©2000 Micron Technology, Inc. All rights reserved.
n
n
n
T5n
T6
NOP
Operations
Don’t Care
T6n