MT46V16M16TG-75 IT:F Micron Technology Inc, MT46V16M16TG-75 IT:F Datasheet - Page 2
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MT46V16M16TG-75 IT:F
Manufacturer Part Number
MT46V16M16TG-75 IT:F
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16TG-75 IT:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 1:
Table 2:
Table 3:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Speed Grade
Marking
-75E/-75Z
-75E
-75Z
-5B
-75
-6T
-5B
-75
-6
6T
-6
1
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Addressing
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Notes:
CL = 2
Yes
-5B
133
133
133
133
100
–
–
–
–
–
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
Clock Rate (MHz)
CL = 2.5
-6/-6T
167
167
167
133
133
Yes
Yes
Yes
16 Meg x 4 x 4 banks
–
–
–
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
64 Meg x 4
8K
CL = 3
200
n/a
n/a
n/a
n/a
-75E
Yes
Yes
Yes
Yes
–
–
2
Data-Out Window Access Window DQS–DQ Skew
8 Meg x 8 x 4 banks
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
32 Meg x 8
1K (A0–A9)
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
-75Z
Yes
Yes
Yes
Yes
Yes
–
8K
256Mb: x4, x8, x16 DDR SDRAM
DD
= V
DD
Q = 2.5V ± 0.2V.
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
Yes
Yes
Yes
Yes
Yes
Yes
-75
©2003 Micron Technology, Inc. All rights reserved.
4 Meg x 16 x 4 banks
16 Meg x 16
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
8K
+0.40ns
+0.40ns
+0.50ns
Features
+0.45ns
+0.50ns
Yes
Yes
Yes
Yes
Yes
Yes
-75