CY7C1021BV33-10VC Cypress Semiconductor Corp, CY7C1021BV33-10VC Datasheet - Page 2

IC SRAM 1MBIT 10NS 44SOJ

CY7C1021BV33-10VC

Manufacturer Part Number
CY7C1021BV33-10VC
Description
IC SRAM 1MBIT 10NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1021BV33-10VC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1012
Pin Configurations
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Note:
Document #: 38-05148 Rev. *A
2.
Mimimum voltage is–2.0V for pulse durations of less than 20 ns.
[2]
[2]
......................................–0.5V to V
...................................–0.5V to V
CC
to Relative GND
[2]
.... –0.5V to +4.6V
BLE
I/O
I/O
I/O
I/O
V
V
NC
1
CC
SS
CC
CC
9
10
15
16
+0.5V
+0.5V
I/O
I/O
I/O
I/O
BHE
OE
NC
A
2
8
11
12
13
14
(Top View)
Mini BGA
A
NC
NC
A
A
A
A
A
3
12
9
14
0
3
5
A
A
NC
A
4
A
A
A
A
13
10
15
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
1
4
6
7
Commercial
Industrial
I/O
I/O
I/O
A
I/O
WE
A
CE
5
11
Range
2
2
5
6
4
I/O
V
V
I/O
I/O
NC
I/O
NC
6
CC
SS
8
7
3
1
A
B
C
D
E
F
G
H
Ambient Temperature
–40°C to +85°C
0°C to +70°C
CY7C1021BV33
3.3V
3.3V
Page 2 of 11
V
CC
10%
10%

Related parts for CY7C1021BV33-10VC