CY7C199-35PC Cypress Semiconductor Corp, CY7C199-35PC Datasheet - Page 6

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CY7C199-35PC

Manufacturer Part Number
CY7C199-35PC
Description
IC SRAM 256KBIT 35NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C199-35PC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1069

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199-35PC
Quantity:
200
Switching Characteristics
Switching Waveforms
Read Cycle No. 1
Notes:
Document #: 38-05160 Rev. **
12. Device is continuously selected. OE, CE = V
13. WE is HIGH for read cycle.
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
Parameter
DATA OUT
ADDRESS
[10,11]
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
[12, 13]
PREVIOUS DATA VALID
Description
Over the Operating Range
[8]
[8]
[8, 9]
[9]
[8]
[8, 9]
IL
.
t
OHA
t
AA
Min.
20
20
15
15
15
10
7C199-20
3
0
3
0
0
0
0
3
[3,7]
Max.
20
20
20
10
9
9
9
(continued)
t
RC
Min.
25
25
18
20
18
10
7C199-25
3
0
3
0
0
0
0
3
Max.
25
25
10
20
11
11
11
Min.
35
35
22
30
22
15
3
0
3
0
0
0
0
3
7C199-35
Max.
DATA VALID
35
35
16
15
15
20
15
Min.
45
45
22
40
22
15
3
0
3
0
0
0
0
3
7C199-45
Max.
CY7C199
45
45
16
15
15
25
15
Page 6 of 16
C199–8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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