M93C46-WMN6T STMicroelectronics, M93C46-WMN6T Datasheet - Page 15

IC EEPROM 1KBIT 2MHZ 8SOIC

M93C46-WMN6T

Manufacturer Part Number
M93C46-WMN6T
Description
IC EEPROM 1KBIT 2MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M93C46-WMN6T

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8 or 64 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1929-2

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M93C86, M93C76, M93C66, M93C56, M93C46
5.3
Figure 4.
1. For the meanings of An, Xn, Qn and Dn, see
Erase Byte or Word
The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or
word) to 1. Once the address has been correctly decoded, the falling edge of the Chip
Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be
detected by monitoring the READY/BUSY line, as described in the
section.
Read
Write
Write
Enable
READ, WRITE, WEN, WDS sequences
S
Q
S
S
Q
D
D
D
1 0
1
1 1 0 An
CODE
CODE
CODE
OP
0
OP
OP
1
0
1
An
1
ADDR
ADDR
Doc ID 4997 Rev 11
Xn X0
A0
A0
Qn
Dn
Table
5.,
DATA OUT
DATA IN
Table 6.
Write
Disable
and
Table
S
D
D0
Q0
7..
BUSY
READY/BUSY status
1
CODE
STATUS
CHECK
0
OP
0
0
0
READY
Xn X0
Instructions
AI00878d
15/36

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