M25P80-VMW6 STMicroelectronics, M25P80-VMW6 Datasheet - Page 41
M25P80-VMW6
Manufacturer Part Number
M25P80-VMW6
Description
IC FLASH 8MBIT 40MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.M25P80-VMW6.pdf
(52 pages)
Specifications of M25P80-VMW6
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3601
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M25P80
Table 15.
1. Details of how to find the Technology Process in the marking are given in AN1995, see also
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Symbol
t
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
SE
BE
CH
(7)
75 MHz available only for products made in T9HX technology, identified with Process digit “4”
+ t
CL
must be greater than or equal to 1/ f
Alt.
AC characteristics (75 MHz operation, Grade 6) (continued)
Page Program cycle time (256 byte)
Page Program cycle time (n bytes, where n = 1 to 4)
Page Program cycle time (n bytes, where n = 5 to
256)
Sector erase cycle time
Bulk erase cycle time
A
= 25°C.
Test conditions specified in
Parameter
C
Table 10
and
Min.
Table 12
int(n/8) × 0.02
Section 12: Part
Typ.
DC and AC parameters
0.64
0.01
0.6
8
(2)
(8)
numbering.
Max.
20
5
3
(1)
Unit
41/52
ms
s
s