M29W800DB70N6T NUMONYX, M29W800DB70N6T Datasheet - Page 21
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M29W800DB70N6T
Manufacturer Part Number
M29W800DB70N6T
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W800DT90N6.pdf
(41 pages)
Specifications of M29W800DB70N6T
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3703-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Table 11. DC Characteristics
Note: 1. Sampled only, not 100% tested.
Figure 12. Read Mode AC Waveforms
Symbol
I
CC3
V
I
I
V
V
A0-A18/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
V
V
I
CC1
CC2
V
I
BYTE
I
LKO
LO
OH
ID
LI
OL
IH
ID
IL
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Identification Voltage
Identification Current
Program/Erase Lockout Supply
Voltage
tELBL/tELBH
Parameter
tBHQV
tAVQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
0V
E = V
RP = V
Controller active
Test Condition
0V
E = V
Program/Erase
I
OH
I
OL
f = 6MHz
A9 = V
V
= –100
IL
= 1.8mA
V
CC
OUT
, G = V
CC
IN
±0.2V,
±0.2V
ID
V
µ
V
CC
A
IH
tBLQZ
CC
,
VALID
M29W800DT, M29W800DB
V
0.7V
tGHQX
tGHQZ
CC
–0.5
11.5
Min
1.8
–0.4
CC
tEHQZ
V
CC
Max
0.45
12.5
100
100
0.8
2.3
±1
±1
10
20
+0.3
tEHQX
tAXQX
AI05448
Unit
mA
mA
µ
µ
µ
µ
21/41
V
V
V
V
V
V
A
A
A
A