CY7C1021CV33-10BAXIT Cypress Semiconductor Corp, CY7C1021CV33-10BAXIT Datasheet - Page 8

• Manufacturer Part Number: CY7C1021CV33-10BAXIT
• Description: IC SRAM 1MBIT 10NS 48LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021CV33-10BAXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 38-05132 Rev. *I
14. Data IO is high impedance if OE, BHE, and/or BLE= V
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
ADDRESS
ADDRESS
BHE, BLE
BHE, BLE
DATA IO
DATA IO
WE
WE
CE
CE
(continued)
t
SA
t
SA
Figure 7. Write Cycle No. 2 (BLE or BHE Controlled)
Figure 6. Write Cycle No. 1 (CE Controlled)
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
t
PWE
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
[14, 15]
t
HD
t
HD
t
HA
t
HA
CY7C1021CV33
Page 8 of 14
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