M24C32-RMN6P STMicroelectronics, M24C32-RMN6P Datasheet - Page 28

• Manufacturer Part Number: M24C32-RMN6P
• Description: IC EEPROM 32KBIT 400KHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M24C32-RMN6P

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 32K (4K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8570; M24C32-RMN6P

DC and AC parameters
28/42
Table 14.
1. If the application uses the voltage range R device with 2.5 V < V
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E0, E1, E2)
Output low voltage
DC characteristics (M24xxx-R - device grade 6)
Table 12
Parameter
instead of this table.
C
max = 1 MHz (see
Doc ID 4578 Rev 18
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.8 V ≤ V
1.8 V ≤ V
1.8 V ≤ V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
to those in
= 1.8 V, f
SS
SS
W
M24C32-DF, M24C32-W, M24C32-R, M24C32-F
CC
CC
CC
, 1.8 V < V
(2)
or V
or V
Table
Table
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
17).
Table 8
, V
= 1.8 V
(1)
10)
SS
CC
(in addition
CC
(4)
or V
cc
,
= 1.8 V
< 2.5 V
< 5.5 V and -40 °C < TA < +85 °C,
and
CC
0.75V
0.75V
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V