M29W640GH70NA6E NUMONYX, M29W640GH70NA6E Datasheet - Page 59

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M29W640GH70NA6E

Manufacturer Part Number
M29W640GH70NA6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GH70NA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
64KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640GH70NA6E
Manufacturer:
ST
Quantity:
3 160
Part Number:
M29W640GH70NA6E
Manufacturer:
ST
0
Figure 24. TBGA64 10 x 13 mm-8 x 8 active ball array, 1 mm pitch, package outline, bottom view
1. Drawing is not to scale.
Table 25.
Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
D
A
b
e
E
TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data
E
BALL "A1"
FD
E1
FE
A
10.00
13.00
0.30
0.80
7.00
1.00
7.00
1.50
3.00
0.50
0.50
Typ
e
millimeters
12.90
D1
0.20
0.35
9.90
Min
D
SD
b
10.10
13.10
Max
1.20
0.35
0.50
0.10
A1
SE
A2
0.012
0.031
0.394
0.276
0.039
0.512
0.276
0.059
0.118
0.020
0.020
Typ
BGA-Z23
inches
0.008
0.014
0.390
0.508
Min
ddd
0.0472
0.014
0.020
0.398
0.004
0.516
Max
59/90

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