M25P128-VMF6TP NUMONYX, M25P128-VMF6TP Datasheet - Page 40

• Manufacturer Part Number: M25P128-VMF6TP
• Description: IC FLASH 128MBIT 50MHZ 16SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VMF6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VMF6TP; M25P128-VMF6TPTR

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Table 17.
1. t
2. Value is guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
5. V
6. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
Figure 20. Serial input timing
S
C
D
Q
Symbol
(success or failure) is known.
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
CH
PPH
t
BE
and t
should be kept at a valid level until the program or erase operation has completed and its result
tCHSL
CL
must be greater than or equal to 1/f
AC characteristics for 130 nm devices (continued)
Alt.
tDVCH
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
Test conditions specified in
High Impedance
MSB IN
tSLCH
tCHDX
Parameter
C
(max).
PP
= V
Table 11
PPH
tCLCH
)
tCHSH
and
LSB IN
Table 12
Min.
tCHCL
tSHSL
56
Typ.
105
(2)
tSHCH
Max.
250
AI01447C
Unit
s