M25PE16-VMP6TG NUMONYX, M25PE16-VMP6TG Datasheet - Page 52

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M25PE16-VMP6TG

Manufacturer Part Number
M25PE16-VMP6TG
Description
IC FLASH 16MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE16-VMP6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Cell Type
NOR
Density
16Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
MLP EP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE16-VMP6TGCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PE16-VMP6TG
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M25PE16-VMP6TG
Manufacturer:
ST
0
Part Number:
M25PE16-VMP6TG
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
52/58
Table 20.
1. Value guaranteed by characterization, not 100% tested in production.
Table 21.
1. All the values are guaranteed by characterization, and not 100% tested in production.
2. See
3.
Figure 28. Reset AC waveforms while a program or erase cycle is in progress
Symbol Alt.
Symbol
t
t
RLRH
RHSL
t
SHRH
S remains Low while Reset is Low.
(1)
Table 12
Reset
S
t
REC
t
Alt.
RST
Reset conditions
Timings after a Reset Low pulse
for a description of the device status after a Reset Low pulse.
Reset
recovery
time
Parameter
Reset pulse width
Chip Select High to
Reset High
Test conditions specified in
Test conditions specified in
Parameter
While decoding an instruction
WREN, WRDI, RDID, RDSR,
READ, RDLR, Fast_Read,
WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
Under completion of an erase or
program cycle of a PW, PP, PE,
SE, BE operation
Under completion of an erase
cycle of an SSE operation
Under completion of a WRSR
operation
Device deselected (S High) and
in standby mode
reset pulse occurred
Conditions:
Chip should have been
deselected before reset is
de-asserted
tSHRH
tRLRH
Conditions
(1)(2)
Table 14
Table 14
(3)
:
and
and
tRHSL
Min.
Table 15
Table 15
Min.
10
10
Typ.
Typ.
Table 18
Table
AI06808b
t
W
Max.
300
30
(see
3
0
Max.
19)
M25PE16
or
Unit
Unit
µs
ns
ms
ms
µs
µs
µs

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