M58BW16FB4ZA3T NUMONYX, M58BW16FB4ZA3T Datasheet - Page 79
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M58BW16FB4ZA3T
Manufacturer Part Number
M58BW16FB4ZA3T
Description
IC FLASH 16MBIT 45NS 80LBGA
Manufacturer
NUMONYX
Datasheet
1.M58BW16FB5T3T.pdf
(88 pages)
Specifications of M58BW16FB4ZA3T
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-LBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW16FB4ZA3TCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M58BW16FB4ZA3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 29.
1. The x 8 or byte address and the x 16 or word address mode are not available.
2. Query data are always presented on DQ7-DQ0. DQ31-DQ8 are set to '0'.
Table 30.
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
Address A0-Amax
A0-Amax
Address
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
1Ah
10h
12h
13h
14h
15h
16h
17h
18h
19h
11h
CFI - Query address and data output
CFI - device voltage and timing specification
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
xxxx xxxxh
27h
36h
35h (M58BW16F)
39h (M58BW32F)
Data
04h
0Ah
51h
52h
59h
(1)
(1)
Data
03h
00h
00h
00h
00h
00h
00h
"Q"
"R"
"Y"
V
V
Reserved
Reserved
2
Reserved
2
Reserved
Reserved
Reserved
Reserved
Reserved
n
n
DD
DD
μs typical for word, double word program
ms, typical time-out for Erase Block
Query ASCII string 52h; "R"
59h; "Y"
Primary vendor:
Command set and control interface ID code
Primary algorithm extended query address table:
P(h)
Alternate vendor:
Command set and control interface ID code
Alternate algorithm extended query address table
51h; "Q"
min
max
(1)(2)
Description
Instruction
Value
16 μs
2.7 V
3.6 V
1 s
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