M58BW32FB5ZA3F NUMONYX, M58BW32FB5ZA3F Datasheet - Page 46

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M58BW32FB5ZA3F

Manufacturer Part Number
M58BW32FB5ZA3F
Description
IC FLASH 32MBIT 55NS 80LBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW32FB5ZA3F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (1M x 32)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.3 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-LBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M58BW32FB5ZA3FCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW32FB5ZA3F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
7
46/87
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 16: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Figure 5.
1. V
Figure 6.
Supply voltage (V
Input/output supply voltage (V
Ambient temperature (T
Load capacitance (C
Clock rise and fall times
Input rise and fall times
Input pulses voltages
Input and output timing ref. voltages
DD
= V
DDQ
Operating and AC measurement conditions
AC measurement input/output waveform
AC measurement load circuit
.
DD
Parameter
)
L
)
A
V DDQIN
)
V DDQ
C L includes JIG capacitance
0 V
DEVICE
UNDER
DDQ
TEST
)
Grade 3
conditions. Designers should check that the
Min
–40
2.7
2.4
C L
0 to V
V
45 ns
M58BW16F, M58BW32F
DDQ
30
DDQ
/2
Max
125
3.6
3.6
3
3
OUT
V DDQIN /2
V DDQ /2
AI04153
AI04154b
Min
–40
2.5
2.4
0 to V
V
55 ns
DDQ
30
DDQ
/2
Max
125
3.3
3.6
3
3
Units
°C
pF
ns
ns
V
V
V
V

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