STK14C88-3NF35 Cypress Semiconductor Corp, STK14C88-3NF35 Datasheet - Page 11

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STK14C88-3NF35

Manufacturer Part Number
STK14C88-3NF35
Description
IC NVSRAM 256KBIT 35NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of STK14C88-3NF35

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Switching Waveforms
Document Number: 001-50592 Rev. *A
Table 3. SRAM Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes
WC
PWE
SCE
SD
HD
AW
SA
HA
HZWE
LZWE
12. If WE is Low when CE goes Low, the outputs remain in the high impedance state.
13. CE or WE must be greater than V
14. HSB must be HIGH during SRAM WRITE cycles.
Parameter
Cypress
[11]
[11,12]
ADDRESS
DATA OUT
ADDRESS
DATA OUT
DATA IN
DATA IN
WE
CE
CE
WE
Parameter
t
t
t
t
t
t
t
t
t
t
AVAV
WLWH,
ELWH,
DVWH,
WHDX,
AVWH,
AVWL,
WHAX,
WLQZ
WHQX
t
t
t
t
t
t
t
ELEH
AVEL
AVEH
EHAX
WLEH
DVEH
EHDX
Alt
IH
during address transitions.
PREVIOUS DATA
t
SA
Figure 10. SRAM Write Cycle 2: CE Controlled
Figure 9. SRAM Write Cycle 1: WE Controlled
t
SA
Write Cycle Time
Write Pulse Width
Chip Enable To End of Write
Data Setup to End of Write
Data Hold After End of Write
Address Setup to End of Write
Address Setup to Start of Write
Address Hold After End of Write
Write Enable to Output Disable
Output Active After End of Write
Description
HIGH IMPEDANCE
t
t
AW
t
PWE
AW
t
HZWE
t
t
t
SCE
SCE
WC
t
WC
t
t
HIGH IMPEDANCE
PWE
SD
DATA VALID
DATA VALID
t
SD
Min
[13, 14]
[13, 14]
35
25
25
12
25
0
0
0
5
t
HA
t
t
t
35 ns
HD
HA
HD
Max
13
t
LZWE
Min
45
30
30
15
30
0
0
0
5
STK14C88-3
45 ns
Max
15
Page 11 of 17
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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