M5M5W816TP-70HI#A0 Renesas Electronics America, M5M5W816TP-70HI#A0 Datasheet - Page 4

• Manufacturer Part Number: M5M5W816TP-70HI#A0
• Description: IC SRAM 8MBIT 70NS 44TSOP
• Manufacturer: Renesas Electronics America

Specifications of M5M5W816TP-70HI#A0

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M5M5W816TP70HI#A0

2002.08.30
M5M5W816TP - 55HI, 70HI, 85HI
RAMs organized as 524288-words by 16-bit, f abricated by
Mitsubishi's high-perf ormance 0.18µm CMOS technology .
where a simple interf acing , battery operating and battery
backup are the important design objectiv es.
outline mount dev ice, with the outline of
TY PE(II). It giv es the best solution f or a compaction of
mounting area as well as f lexibility of wiring pattern of
printed circuit boards.
DESCRIPTION
The M5M5W816TP is a f amily of low v oltage 8-Mbit static
temperature
PIN CONFIGURATION
-40~+85°C
Operating
The M5M5W816TP is suitable f or memory applications
I-version
The M5M5W816TP is packaged in a
GND
DQ
DQ
DQ
DQ
DQ
Version,
DQ
DQ
DQ
S#
W #
A
A
A
A
A
V
A
A
A
A
A
4
3
2
0
16
1
15
14
13
12
CC
1
2
3
4
8
5
6
7
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
Ver. 6.1
M5M5W816TP -55HI
M5M5W816TP -70HI
M5M5W816TP -85HI
Part name
44
43
42
35
32
30
29
28
27
26
25
24
23
41
40
39
38
37
36
34
33
31
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
A
A
A
A
A
A
A
BC2#
BC1#
A
OE#
GND
A
V
5
17
6
7
18
9
10
11
8
CC
16
15
14
12
11
10
9
2.7~3.6V
13
Supply
Power
44pin thin small
400mil TSOP
44Pin 400mil TSOP
Outline:
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Access time
44P3W
55ns
70ns
85ns
max.
* Typ. (@ 3.0V)
25°C 40°C
0.5
- Single 2.7~3.6V power supply
- Small stand-by current: 0.1µA (2.0V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S#, BC1# and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE# prev ents data contention in the I/O bus
- Process technology : 0.18µm CMOS
- Package: 44pin 400mil TSOP TYPE(II)
FEATURES
1.0
Stand-by c urrent
DQ1 ~ DQ16
* Typical parameter indicates the value for the
center of distribution, and not 100% tested.
25°C
A0 ~ A18
5.0
Ratings (max. @3.6V)
GND
Pin
BC2#
OE#
BC1#
Vcc
W#
S#
40°C
8.0
Upper By te (DQ9 ~ 16)
Address input
Data input / output
Chip select input
Write control input
Output enable input
Power supply
Ground supply
Lower By te (DQ1 ~ 8)
70°C 85°C
MITSUBISHI LSIs
20
Function
40
*(3.0V ty p.)
current
1
Activ e
(10MHz)
(1MHz)
30mA
5mA
Icc1