R1LP0408CSB-5SC#A0 Renesas Electronics America, R1LP0408CSB-5SC#A0 Datasheet - Page 14
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R1LP0408CSB-5SC#A0
Manufacturer Part Number
R1LP0408CSB-5SC#A0
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
Renesas Electronics America
Datasheet
1.R1LP0408CSP-5SCB0.pdf
(16 pages)
Specifications of R1LP0408CSB-5SC#A0
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 70°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
R1LP0408CSB5SC#A0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
R1LP0408C-C Series
Low V
(Ta = −20 to +70°C)
Parameter
V
Data
retention
current
Chip deselect to data retention time
Operation recovery time
Notes: 1. Typical values are at V
Low V
Rev.2.00, May.26.2004, page 12 of 12
CC
0 V
V
2.2 V
V
4.5 V
CS#
CC
DR
for data retention
CC
2. Typical values are at V
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
4. t
CC
Data Retention Timing Waveform (CS# Controlled)
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
RC
Data Retention Characteristics
−5SC
−7LC
= read cycle time.
t
CDR
to +70°C
to +40°C
to +25°C
to +70°C
to +40°C
to +25°C
CC
CC
= 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
= 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
Symbol Min Typ
V
I
I
I
I
I
I
t
t
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CDR
R
DR
Data retention mode
CS# ≥ V
2
0
t
RC
*
4
CC
1.0*
0.8*
1.0*
0.8*
– 0.2 V
2
1
2
1
Max Unit Test conditions*
8
3
3
16
10
10
V
µA
µA
µA
µA
µA
µA
ns
ns
CS# ≥ V
V
CS# ≥ V
See retention waveform
CC
= 3.0 V, Vin ≥ 0 V
CC
CC
− 0.2 V, Vin ≥ 0 V
− 0.2 V
t
R
3